DC and Quasi-static
I-V, contact behavior, MOS C-V, diode and transistor transfer/output curves.
- I-V Sweep Lab
- Contact Simulator
- MOS C-V Workbench
- Diode Curve Explorer
- Transistor Curve Explorer
micro2nano
Web Simulation Platform
Characterization Domain 1
Select tool → configure scenario → run simulation → interpret output. Parameters include explicit units and physics-grounded ranges.
I-V, contact behavior, MOS C-V, diode and transistor transfer/output curves.
Frequency response in impedance, conductance dispersion, and dielectric losses.
Scheduled for upcoming rebuild wave
DLTS, trap capture/emission kinetics, transient current, and 1/f noise simulation.
Scheduled for upcoming rebuild wave
Carrier density and mobility extraction from Hall and pulsed measurement workflows.
Scheduled for upcoming rebuild wave